- 您现在的位置：买卖IC网 > PDF目录36694 > AP4 S BAND, Si, N-CHANNEL, RF POWER, JFET PDF资料下载
参数资料
| 型号： | AP4 |
| 元件分类： | 功率晶体管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, JFET |
| 封装： | LGA-9 |
| 文件页数： | 1/4页 |
| 文件大小： | 83K |
| 代理商： | AP4 |
WJ Communications, Inc. Phone: 1-800-WJ1-4401 FAX: 408-577-6620 e-mail: sales@wj.com Web site: www.wj.com
February 2002
AP4
Product Description
The AP4 is a medium power FET packaged in
a high frequency surface mount package. The
combination of high output power and high
output IP3 at the same bias point makes it ideal
for receiver and transmitter applications. The
AP4 achieves +40 dBm OIP3 at a mounting
temperature of 80°C with an associated MTBF
of >100 years3. The package is a 3 X 3 Land
Grid Array (LGA). All devices are 100% RF
and DC tested. The product is targeted for
fixed wireless and W-LAN applications where
high linearity, medium power and high fre-
quency are required.
Product Features
100-6000 MHz
+40 dBm Output IP3
1.5 dB Noise Figure
16 dB Gain
+27 dBm P1dB
MTBF >100 Years
3 X 3 LGA SMT Package
Functional Diagram
Gate
(Neg bias)
Drain
(Pos bias)
Pin 1 indicator
All other pins including
center pin are grounded
Medium Power High Dynamic Range FET
Specifications
DC Electrical Parameter Units
Min.
Typical
Max.
Saturated Drain Current, Idss
mA
440
580
760
Transconductance, Gm
mS
280
Pinch Off Voltage, Vp
V
-5.0
-3.2
RF Parameter
Units
Min.
Typical
Max.
Small Signal Gain, Gss
dB
14
16
Max Stable Gain, Gmsg
dB
22
Output IP3
dBm
36
40
Output P1dB
dBm
26
27
Noise Figure, NF
dB
1.5
Notes:
1. DC and RF parameters measured under the following conditions unless otherwise noted:
22°C with Vds = 8.0 volts, Ids = 200 mA, Test frequency = 800 MHz, 50 system.
2. OIP3 measured with two tones at an output power of 5 dBm/tone separated by 10 MHz. The
suppression on the largest IM3 product is used to calculate the OIP3 using a 2:1 slope rule.
3. MTBF calculated with channel temperature at 155C.
Absolute Maximum Ratings
Parameter
Rating
Drain to Source Voltage
10 V
Gate to Source Voltage
-6.0 V
Operating Case Temperature
-40 to +80°C
Storage Temperature
-55 to +125°C
Input RF Power (continuous)
+15 dBm
Gate Current
12 mA
Maximum DC Power
1.8 W
Operation of this device above any of these parameters may cause permanent damage.
Ordering Information
Part No.
Description
AP4
Medium Power High Dynamic Range FET
(Available in tape and reel)
TOP VIEW
The Communications Edge
Advanced Product Information
Typical Parameters
Parameter
Units
Typical
Frequency
GHz
5.8
S21
dB
9.3
S11
dB
-15.5
S22
dB
-16.2
Output IP3
dBm
+38.5
Output P1dB
dBm
+21.2
Noise Figure
dB
5.6
Typical parameters reflect performance in an application circuit.
Actual Size
相关PDF资料 |
PDF描述 |
|---|---|
| AP50G60SW | 75 A, 600 V, N-CHANNEL IGBT |
| AP50T03GH | 37 A, 30 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| AP50T03GJ | 37 A, 30 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 |
| AP50T10GH-HF | 38 A, 100 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| AP50T10GJ-HF | 38 A, 100 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AP-40 | 制造商:Mac8 功能描述: |
| AP400 | 制造商:Carlo Gavazzi 功能描述:TERM. CVR 300/400 SET OF 2 |
| AP40011339U | 制造商:n/a 功能描述:RELAY 120VAC |
| AP4001-1339U | 制造商:n/a 功能描述:RELAY 120VAC |
| AP4002I-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
发布紧急采购，3分钟左右您将得到回复。