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参数资料
| 型号： | AP501 |
| 元件分类： | 放大器 |
| 英文描述： | 1930 MHz - 1990 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 封装： | ROHS COMPLIANT, FM-6 |
| 文件页数： | 3/5页 |
| 文件大小： | 380K |
| 代理商： | AP501 |
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com
Page 3 of 5 February 2006
AP501
PCS-band 4W HBT Amplifier Module
Product Information
The Communications Edge
TM
Performance Graphs – Class B Configuration
The AP501 can be adjusted to operate at lower current biasing levels by modifying the R7 resistor for improved efficiency
performance. The configuration shown on this page has the AP501 operating with Icq = 250 mA (Icc = 400 mA @ 27 dBm).
Output L-C matching components have been added externally on the circuit to optimize the amplifier for ACPR performance at
this biasing configuration.
Notes:
1. Please note that for reliable operation, the evaluation board will have to
be mounted to a much larger heat sink during operation and in laboratory
environments to dissipate the power consumed by the device. The use of
a convection fan is also recommended in laboratory environments.
Details of the mounting holes used in the WJ heatsink are given on the
last page of this datasheet.
2. The area around the module underneath the PCB should not contain any
soldermask in order to maintain good RF grounding.
3. For proper and safe operation in the laboratory, the power-on sequencing
should be followed:
a. Connect RF In and Out
b. Connect the voltages and ground pins as shown in the circuit.
c. Apply the RF signal
d. Power down with the reverse sequence
Narrowband S-Parameters
+25 °C, Icq=250mA
26
27
28
29
30
31
1930
1950
1970
1990
Frequency (MHz)
S2
1
(dB
)
-25
-20
-15
-10
-5
0
S1
1,
S
22
(dB
)
S21
S11
S22
PAE / Icc vs. Output Power
+25 °C, 1960 MHz, Icq=250mA
0
100
200
300
400
500
24
25
26
27
28
29
30
Output Power (dBm)
Icc
(mA
)
0%
10%
20%
30%
40%
50%
PA
E
(dB
m
)
Icc
PAE
OIP3 / IMD vs. Output Power
+25 °C, 1960 MHz, Icq=250mA
-70
-60
-50
-40
-30
-20
22
24
26
28
30
Output Power / tone (dBm)
IM
D
(dB
c
)
30
35
40
45
50
55
OI
P
3
(dB
m
)
IMD
OIP3
ACPR vs. Channel Power
+25 °C, IS-95A, 9 Ch. Fwd, 1FA, fo=1960 MHz, Icq=250mA
-70
-60
-50
-40
25
26
27
28
29
30
31
Output Channel Power (dBm)
ACP
R
(dB
c)
±885 kHz
±1.25 MHz
ACPR vs. Channel Power
+25 °C, IS-95A, 9 Ch. Fwd, 7FA, fo=1935 MHz, Icq=250mA
-70
-60
-50
-40
18
19
20
21
22
23
24
25
Output Channel Power (dBm)
AC
P
R
(dB
c
)
±885 kHz
±1.25 MHz
ACLR vs. Channel Power
+25 °C, 3GPP W-CDMA, Test Model 1+32 DPCH, 1960 MHz, Icq=250mA
-70
-60
-50
-40
20
21
22
23
24
25
26
27
28
Output Channel Power (dBm)
AC
L
R
(dB
c)
±5 MHz
±10 MHz
DNP
0
730
0
10
μF
.01
μF
.01
μF
100pF
+
12V
+
12V
GND
+5
V
6
5
4
2
3
1
RF IN
RF OUT
2.2nH
R2
0.2pF
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