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参数资料
| 型号： | AP5521GH-HF |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 100 V, 0.15 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封装： | HALOGEN FREE AND ROHS COMPLIANT, TO-252, 5 PIN |
| 文件页数： | 2/7页 |
| 文件大小： | 83K |
| 代理商： | AP5521GH-HF |
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
100
-
V
VGS=10V, ID=2A
-
150
mΩ
VGS=5V, ID=1A
-
250
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=2A
-
2.8
-
S
IDSS
Drain-Source Leakage Current
VDS=80V, VGS=0V
-
10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
+100
nA
Qg
Total Gate Charge
2
ID=2A
-
10
16
nC
Qgs
Gate-Source Charge
VDS=80V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
4
-
nC
td(on)
Turn-on Delay Time
2
VDS=50V
-
6.5
-
ns
tr
Rise Time
ID=2A
-
7
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-14
-
ns
tf
Fall Time
VGS=10V
-
3.5
-
ns
Ciss
Input Capacitance
VGS=0V
-
420
672
pF
Coss
Output Capacitance
VDS=25V
-
60
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
40
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
VSD
Forward On Voltage
2
IS=2.4A, VGS=0V
-
1.3
V
trr
Reverse Recovery Time
2
IS=2A, VGS=0V
-
40
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
75
-
nC
2
AP5521GH-HF
N-CH Electrical Characteristics@ Tj=25
oC(unless otherwise specified)
RDS(ON)
Static Drain-Source On-Resistance
2
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相关代理商/技术参数 |
参数描述 |
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| AP5521GM-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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| AP55SD | 功能描述:整流器/与可变电容器 125Volts 1.5pF-55pF RoHS:否 制造商:Xicon 电容范围:2.8 pF to 12.5 pF 容差: 电压额定值:200 V 工作温度范围:- 35 C to + 85 C 端接类型:SMD/SMT 产品:Trimmer Capacitors - Ceramic Dielectric |
| AP55T06GI-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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