参数资料
型号: AP5521GH-HF
厂商: ADVANCED POWER ELECTRONICS CORP
元件分类: JFETs
英文描述: 100 V, 0.15 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
封装: HALOGEN FREE AND ROHS COMPLIANT, TO-252, 5 PIN
文件页数: 3/7页
文件大小: 83K
代理商: AP5521GH-HF
AP5521GH-HF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
-100
-
V
VGS=-10V, ID=-2A
-
155
VGS=-5V, ID=-1A
-
250
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-2A
-
8.5
-
S
IDSS
Drain-Source Leakage Current
VDS=-80V, VGS=0V
-
-10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
+100
nA
Qg
Total Gate Charge
2
ID=-2A
-
29
46
nC
Qgs
Gate-Source Charge
VDS=-80V
-
3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-10V
-
9
-
nC
td(on)
Turn-on Delay Time
2
VDS=-50V
-
9
-
ns
tr
Rise Time
ID=-2A
-
6
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-49
-
ns
tf
Fall Time
VGS=-10V
-
22
-
ns
Ciss
Input Capacitance
VGS=0V
-
1400
2240
pF
Coss
Output Capacitance
VDS=-25V
-
110
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
70
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
VSD
Forward On Voltage
2
IS=-2.4A, VGS=0V
-
-1.3
V
trr
Reverse Recovery Time
2
IS=-2A, VGS=0V
-
39
-
ns
Qrr
Reverse Recovery Charge
dI/dt=-100A/s
-
73
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test.
3.N-CH , P-CH are same , mounted on 2oz FR4 board t ≦10s.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
3
P-CH Electrical Characteristics@Tj=25
oC(unless otherwise specified)
RDS(ON)
Static Drain-Source On-Resistance
2
相关PDF资料
PDF描述
AP60T03AS 45 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
AP60T03AP 45 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
AP60T10GP 67 A, 100 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
AP60T10GS 67 A, 100 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
AP60U03GH 40 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
相关代理商/技术参数
参数描述
AP5521GM-HF 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP552798 制造商:AROMAT 功能描述:AROMAT SWITCHING RELAY
AP55HV 功能描述:整流器/与可变电容器 PTFE Dielectric 600V 1.5 to 55.0pF RoHS:否 制造商:Xicon 电容范围:2.8 pF to 12.5 pF 容差: 电压额定值:200 V 工作温度范围:- 35 C to + 85 C 端接类型:SMD/SMT 产品:Trimmer Capacitors - Ceramic Dielectric
AP55SD 功能描述:整流器/与可变电容器 125Volts 1.5pF-55pF RoHS:否 制造商:Xicon 电容范围:2.8 pF to 12.5 pF 容差: 电压额定值:200 V 工作温度范围:- 35 C to + 85 C 端接类型:SMD/SMT 产品:Trimmer Capacitors - Ceramic Dielectric
AP55T06GI-HF 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET