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参数资料
| 型号： | AP601-F |
| 厂商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分类： | 放大器 |
| 英文描述： | 800 MHz - 2000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封装： | 5 X 6 MM, ROHS COMPLIANT, SMT, DFN-14 |
| 文件页数： | 1/10页 |
| 文件大小： | 814K |
| 代理商： | AP601-F |
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com, www.TriQuint.com
Page 1 of 10 May 2007 ver 1
AP601
High Dynamic Range 1.8W 28V HBT Amplifier
Product Features
800 – 2400 MHz
+32.5 dBm P1dB
-51 dBc ACLR @ W PAVG
-55 dBc IMD3 @ W PEP
17% Efficiency @ W PAVG
Internal Active Bias
Internal Temp Compensation
Capable of handling 7:1 VSWR @
28 Vcc, 2.14 GHz, 1W CW Pout
Lead-free/RoHS-compliant
5x6 mm power DFN package
Applications
Mobile Infrastructure HPA
WiBro HPA
Product Description
The AP601 is a high dynamic range power amplifier in a
lead-free/RoHS-compliant 5x6mm power DFN SMT
package. The single stage amplifier has 13.5 dB gain, while
being able to achieve high performance for 800-2400 MHz
applications with up to +32.5 dBm of compressed 1dB power.
The AP601 uses a high reliability, high voltage
InGaP/GaAs HBT process technology.
The device
incorporates proprietary bias circuitry to compensate for
variations in linearity and current draw over temperature.
The module does not require any negative bias voltage; an
internal active bias allows the AP601 to operate directly off
a commonly used high voltage supply (typically +24 to
+32V). An added feature allows the quiescent bias to be
adjusted externally to meet specific system requirements.
The AP601 is targeted for use as a pre-driver and driver
stage amplifier in wireless infrastructure where high
linearity and high efficiency is required. This combination
makes the device an excellent candidate for next generation
multi-carrier 3G mobile infrastructure.
Functional Diagram
ACLR1 vs. Output Power vs. Icq
WCDMA, Vcc = 28V, 2140 MHz, 25 C
-60
-55
-50
-45
-40
-35
18
20
22
24
26
Average Output Power (dBm)
ACL
R
1
(dBc)
20 mA
40 mA
50 mA
Specifications
W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB
@ 0.01% Probability, 3.84 MHz BW, Vcc = +28V, Icq = 40 mA
Parameter
Units Min
Typ
Max
Operational Bandwidth
MHz
800
2200
Test Frequency
MHz
2140
Output Channel Power
dBm
+24
Power Gain
dB
13.5
Input Return Loss
dB
12
Output Return Loss
dB
8
ACLR
dBc
-51
IMD3 @ +24 dBm PEP
dBc
-55
PIN_VPD Current, Ipd
mA
1
Operating Current, Icc
mA
52
Collector Efficiency
%
17
Output P1dB
dBm
+32.5
Quiescent Current, Icq
mA
40
Vpd, Vbias
V
+5
Vcc
V
+28
Absolute Maximum Rating
Parameter
Rating
Storage Temperature, Tstg
-55 to +125 C
Junction Temperature, TJ
For 106 hours MTTF
192 C
RF Input Power (CW tone), Pin
Input P6dB
Breakdown Voltage C-B, BVCBO
80 V @ 0.1 mA
Breakdown Voltage C-E, BVCEO
51 V @ 0.1 mA
Quiescent Bias Current, ICQ
80 mA
Power Dissipation, PDISS
2.3 W
Operation of this device above any of these parameters may cause permanent damage.
Typical Performance
W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB
@ 0.01% Probability, 3.84 MHz BW, Vcc = +28V, Icq = 40 mA
Parameter
Units
Typical
Test Frequency
MHz
940
1960
2140
Channel Power
dBm
+24
Power Gain
dB
15.8
15
13.5
Input Return Loss
dB
13
11
12
Output Return Loss
dB
7
10
8
ACLR
dBc
-50
-49
-51
IMD3 @ +24 dBm PEP
dBc
-51
-62
-55
Operating Current, Icc
mA
52
Collector Efficiency
%
17
Output P1dB
dBm
+32.5
+32.7
+32.5
Quiescent Current, Icq
mA
40
Vpd, Vbias
V
+5
Vcc
V
+28
Notes:
1. The reference designs shown in this datasheet have the device optimized for WCDMA ACLR
performance at +25
° C. Biasing for the amplifier is suggested at Vcc = +28V and Icq = 40 mA to
achieve the best tradeoff in terms of efficiency and linearity. Increasing Icq will improve upon the
device linearity (IMD3 and ACLR), but will decrease the efficiency performance slightly. More
information is given in the other parts of this datasheet.
2. The AP601 evaluation board has been tested for ruggedness to be capable of handling:
7:1 VSWR @ +28 Vcc, 2140 MHz, 1W CW Pout,
5:1 VSWR @ +30 Vcc, 2140 MHz, 1W CW Pout,
3:1 VSWR @ +32 Vcc, 2140 MHz, 1W CW Pout.
Ordering Information
Part No.
Description
AP601-F
High Dynamic Range 28V 1.8W HBT Amplifier
AP601-PCB900
869-960 MHz Evaluation board
AP601-PCB1960 1930-1990 MHz Evaluation board
AP601-PCB2140 2110-2170 MHz Evaluation board
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| APG-2023 | 1000 MHz - 2000 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AP601-PCB1960 | 功能描述:射频开发工具 1930-1990MHz Brd 15dB Gain RoHS:否 制造商:Taiyo Yuden 产品:Wireless Modules 类型:Wireless Audio 工具用于评估:WYSAAVDX7 频率: 工作电源电压:3.4 V to 5.5 V |
| AP601-PCB2140 | 功能描述:射频开发工具 2110-2170MHz Brd 13.5dB Gain RoHS:否 制造商:Taiyo Yuden 产品:Wireless Modules 类型:Wireless Audio 工具用于评估:WYSAAVDX7 频率: 工作电源电压:3.4 V to 5.5 V |
| AP601-PCB900 | 功能描述:射频开发工具 869-960MHz Eval Brd 16dB Gain RoHS:否 制造商:Taiyo Yuden 产品:Wireless Modules 类型:Wireless Audio 工具用于评估:WYSAAVDX7 频率: 工作电源电压:3.4 V to 5.5 V |
| AP602 | 制造商:WJCI 制造商全称:WJCI 功能描述:High Dynamic Range 4W 28V HBT Amplifier |
| AP-602 | 功能描述:AIR FILTRATION PANEL AP-602 制造商:3m 系列:Versaflo?，AP-600 零件状态:有效 类型:空气过滤面板 标准包装:1 |
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