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参数资料
型号： AP601-F
厂商： TRIQUINT SEMICONDUCTOR INC
元件分类： 放大器
英文描述： 800 MHz - 2000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
封装： 5 X 6 MM, ROHS COMPLIANT, SMT, DFN-14
文件页数： 5/10页
文件大小： 814K
代理商： AP601-F
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com, www.TriQuint.com
Page 4 of 10 May 2007 ver 1
AP601
High Dynamic Range 1.8W 28V HBT Amplifier
869-960 Application Circuit (AP601-PCB900)
Typical WCDMA Performance at 25
°C
at a channel power of +24 dBm
Frequency (MHz)
880
940
Units
W-CDMA Ch. Power
+24
dBm
Power Gain
16.5
15.8
dB
Input Return Loss
8.9
14
dB
Output Return Loss
15
7.5
dB
ACLR
-50
dBc
IMD3 @ +24 dBm PEP
-51
dBc
Operating Current, Icc
54
52
mA
Collector Efficiency
16.6
17
%
Output P1dB
+32.5 +32.5 dBm
Quiescent Current, Icq
40
mA
Vpd, Vbias
+5
V
Vcc
+28
V
Notes:
1. The primary RF microstrip line is 50
Ω.
2. Components shown on the silkscreen but not on the schematic are not used.
3. The center of C1 is at 0.710” (29.1
° @ 940 MHz) from the center of C24.
4. The center of C24 is placed at 0.285” (11.7
°@ 940 MHz) from the edge of the AP601 (U1).
5. The center of C26 is placed at 0.055” (2.3
° @ 940 MHz) from the edge of the AP601 (U1).
6. The center of L4 is at 0.095” (3.9
° @ 940 MHz) from the center of C26.
7. The bold-faced RF trace is for the DC bias feed. The stub’s length is approximately a λ.
8. The main RF trace is cut at components L3 and L4 for this particular reference design.
869-960 MHz Application Circuit Performance Plots
Gain vs. Frequency
Vcc = 28V, Icq = 40 mA, 25 C
13
14
15
16
17
18
0.8
0.84
0.88
0.92
0.96
1
Frequency (GHz)
Gai
n
(
d
B
)
S11, S22 vs. Frequency
Vcc = 28V, Icq = 40 mA, 25 C
-25
-20
-15
-10
-5
0
0.8
0.85
0.9
0.95
1
1.05
1.1
Frequency (GHz)
S11,
S
2
(dB)
S11
S22
Efficiency vs. Output Power vs. Frequency
CW tone, Vcc = 28V, Icq = 40 mA, 25 C
0
10
20
30
40
50
60
17
21
25
29
33
Output Power (dBm)
Colle
ctor
Ef
ficien
cy
(%)
920 MHz
940 MHz
960 MHz
ACLR1 vs. Output Power vs. Frequency
WCDMA, Vcc = 28V, Icq = 40 mA, 25 C
-60
-55
-50
-45
-40
16
18
20
22
24
26
Average Output Power (dBm)
A
CLR1
(
dBc)
869 MHz
920 MHz
880 MHz
940 MHz
894 MHz
960 MHz
WCDMA 3GPP Test Model 1+64DPCH,
60% clipping, PAR = 8.6 dB @ 0.01%
IMD vs. Output Power
CW 2-tone signal, 940 MHz, f = 1 MHz, 28V, 40 mA Icq, 25 C
-70
-60
-50
-40
20
22
24
26
28
30
Output Power, PEP (dBm)
IMD
(
dBc)
IMD3L
IMD3U
IMD5
ACPR vs. Output Power vs. Frequency
IS-95A, 9 Ch. Fwd, 940 MHz, Vcc = 28V, Icq = 40 mA, 25 C
-70
-60
-50
-40
17
19
21
23
25
27
Average Output Power (dBm)
ACPR
(dB
c
)
Unconditionally stable circuit version of this application circuit is available for download off of the website at: http://www.wj.com
C24
1.8pF
See note 4
C26
0.5pF
See note 5
V
BI
AS
V
PD
GND
V
CC
5.1 Ohm
3.3pF
See note 3
C7
1000pF
15nH
See note 6
相关PDF资料
PDF描述
APD869 MOBILE STATION ANTENNA, 5.1 dBi GAIN
APG-2053 500 MHz - 2000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
APG-2050 50 MHz - 2000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
APG-2023 1000 MHz - 2000 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
APG-4002 2000 MHz - 4000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
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