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参数资料
| 型号： | AP603-F |
| 元件分类： | 放大器 |
| 英文描述： | 800 MHz - 2200 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封装： | 6 X 5 MM, ROHS COMPLIANT, MO-229VJGC, SMT, DFN-14 |
| 文件页数： | 14/14页 |
| 文件大小： | 1200K |
| 代理商： | AP603-F |
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com, www.TriQuint.com
Page 9 of 14 May 2007 ver 1
AP603
High Dynamic Range 7W 28V HBT Amplifier
2010-2025 MHz Application Circuit
Typical Performance at 25
°C at an
output power of +30 dBm
Frequency
2015 MHz
Total Output Power
+30 dBm
Power Gain
12.3 dB
Input Return Loss
11 dB
Output Return Loss
14 dB
IMD3 @ +30 dBm PEP
-48 dBc
Operating Current, Icc
230 mA
Collector Efficiency
15.5 %
Output P1dB
+38.2 dBm
Quiescent Current, Icq
160 mA
Vpd, Vbias
+5 V
Vcc
+28 V
Notes:
1. The primary RF microstrip line is 50
Ω.
2. Components shown on the silkscreen but not on the schematic are not used.
3. The center of C22 is placed at 0.185” (16.3
° @ 2015 MHz) from the center of C1.
4. The center of C1 is placed at 0.705” (61.9
° @ 2015 MHz) from the center of C25.
5. The center of C25 is placed at 0.140” (12.3
° @ 2015 MHz) from the center of C5.
6. The center of C5 is placed at 0.125” (11.0
° @ 2015 MHz) from the edge of the AP603 (U1).
7. The center of C30 is placed at 0.250” (41.2
° @ 2015 MHz) from the edge of the AP603 (U1).
8. The center of C19 is placed at 0.490” (43.0
° @ 2015 MHz) from the center of C23.
9. The bold-faced RF trace is for the DC bias feed. The stub’s length is approximately a λ.
2010-2025 MHz Application Circuit Performance Plots
Gain vs. Output Power vs. Frequency
CW tone, Vcc = 28V, Icq = 160 mA, 25 C
8
9
10
11
12
13
30
32
34
36
38
40
Output Power (dBm)
Ga
in
(dB)
2000 MHz
2015 MHz
2025 MHz
S11, S22 vs. Frequency
Vcc = 28V, Icq = 160 mA, 25 C
-25
-20
-15
-10
-5
0
1.96
1.98
2
2.02
2.04
2.06
2.08
Frequency (GHz)
S11,
S22
(
d
B)
S11
S22
Efficiency vs. Output Power vs. Frequency
CW tone, Vcc = 28V, Icq = 160 mA, 25 C
0
10
20
30
40
50
22
26
30
34
38
Output Power (dBm)
Colle
ctor
Ef
ficien
cy
(%)
2000 MHz
2010 MHz
2025 MHz
ACLR1 vs. Output Power vs. Icq
3 carrier TD-SCDMA, Vcc = 28V, 2015 MHz, 25 C
-65
-60
-55
-50
-45
-40
20
21
22
23
24
25
26
27
Average Output Power (dBm)
ACLR
1
(dBc
)
140 mA
160 mA
180 mA
200 mA
PAR = 9.6 dB @ 0.01% prob
IQ Mod Filter : 2.1 MHz
Sample clock: 32 MHz
BW = 1.28 MHz
ACLR vs. Output Power vs. Icq
3 carrier TD-SCDMA, Vcc = 28V, Icq = 160 mA, 2015 MHz, 25 C
-65
-60
-55
-50
-45
-40
20
21
22
23
24
25
26
27
Average Output Power (dBm)
ACL
R
(dBc
)
ACLR1
ACLR2
PAR = 9.6 dB @ 0.01% prob
IQ Mod Filter : 2.1 MHz
Sample clock: 32 MHz
BW = 1.28 MHz
Efficiency vs. Output Power vs. Frequency
3 carrier TD-SCDMA, Vcc = 28V, Icq = 160 mA, 25 C
0
2
4
6
8
10
20
21
22
23
24
25
26
27
Average Output Power (dBm)
Coll
ector
E
fficien
cy
(%)
2010 MHz
2015 MHz
2025 MHz
PAR = 9.6 dB @ 0.01% prob
IQ Mod Filter : 2.1 MHz
Sample clock: 32 MHz
BW = 1.28 MHz
1.8pF
See note 3
See note 6
C30
3.3pF
See note 7
5.6pF
See note 4
0.8pF
See note 8
V
BI
AS
V
PD
GND
V
CC
C25
0.8pF
See note 5
W= 0.030”
L = 1.000”
C7
1000pF
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