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参数资料
| 型号： | AP60L02GH |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 50 A, 25 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封装： | LEAD FREE PACKAGE-3 |
| 文件页数： | 3/6页 |
| 文件大小： | 80K |
| 代理商： | AP60L02GH |
AP60L02GH/J
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
0.6
0.8
1
1.2
1.4
1.6
1.8
-50
0
50
100
150
T j , Junction Temperature (
o C)
No
rma
li
ze
d
R
DS
(ON)
V G =10V
I D =25A
8
10
12
14
16
18
20
22
24
26
23
45
67
89
10
11
V GS (V)
R
DS
(ON)
(m
ΩΩΩΩ
)
I D =25A
T c =25 ℃
℃
0
50
100
150
200
012345678
V DS , Drain-to-Source Voltage (V)
I
D
,
Dra
in
C
u
rre
nt
(A
)
T C =25
o C
V G =4.0V
V G =6.0V
V G =8.0V
V G =10V
0
50
100
150
0123
45678
V DS , Drain-to-Source Voltage (V)
I
D
,
Dra
in
C
u
rre
nt
(A
)
T C =150
o C
V G =4.0V
V G =6.0V
V G =8.0V
V G =10V
相关PDF资料 |
PDF描述 |
|---|---|
| AP60L02GJ | 50 A, 25 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 |
| AP60T03GI | 45 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| AP60T10GI-HF | 34 A, 100 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| AP60U02GH | 40 A, 25 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| AP640R1-00 | 18000 MHz - 40000 MHz RF/MICROWAVE SGL POLE SGL THROW SWITCH, 1.3 dB INSERTION LOSS |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AP60L02GJ | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Low Gate Charge Simple Drive Requirement |
| AP60L02GP | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP60L02GS | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP60L02P | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP60L02S | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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