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参数资料
| 型号： | AP60L02GH |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 50 A, 25 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封装： | LEAD FREE PACKAGE-3 |
| 文件页数： | 4/6页 |
| 文件大小： | 80K |
| 代理商： | AP60L02GH |
AP60L02GH/J
Fig 5. Maximum Drain Current v.s.
Fig 6. Typical Power Dissipation
Case Temperature
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
0
10
20
30
40
50
60
25
50
75
100
125
150
T c , Case Temperature (
o C)
I
D
,
Dra
in
C
u
rre
nt
(A
)
0
10
20
30
40
50
60
70
0
50
100
150
T c ,Case Temperature (
o C)
P
D
(W
)
1
10
100
1000
1
10
100
V DS (V)
I
D
(A
)
T c =25
o C
Single Pulse
100us
1ms
10ms
100ms
10us
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
No
rma
li
zed
Therma
lR
esp
o
n
se
(R
th
jc
)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
DUTY=0.5
SINGLE PULSE
相关PDF资料 |
PDF描述 |
|---|---|
| AP60L02GJ | 50 A, 25 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 |
| AP60T03GI | 45 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| AP60T10GI-HF | 34 A, 100 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| AP60U02GH | 40 A, 25 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| AP640R1-00 | 18000 MHz - 40000 MHz RF/MICROWAVE SGL POLE SGL THROW SWITCH, 1.3 dB INSERTION LOSS |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AP60L02GJ | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Low Gate Charge Simple Drive Requirement |
| AP60L02GP | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP60L02GS | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP60L02P | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP60L02S | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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