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参数资料
| 型号： | AP60L02GJ |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 50 A, 25 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 |
| 封装： | LEAD FREE PACKAGE-3 |
| 文件页数： | 2/6页 |
| 文件大小： | 80K |
| 代理商： | AP60L02GJ |
Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
25
-
V
ΔBV
DSS/ΔTj
Breakdown Voltage Temperature Coefficient
Reference to 25℃, ID=1mA
-
0.037
-V/℃
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=25A
-
12
mΩ
VGS=4.5V, ID=20A
-
26
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=25A
-
30
-
S
IDSS
Drain-Source Leakage Current (Tj=25
oC)
VDS=25V, VGS=0V
-
1
uA
Drain-Source Leakage Current (Tj=150
oC)
VDS=20V, VGS=0V
-
25
uA
IGSS
Gate-Source Leakage
VGS=-
-
nA
Qg
Total Gate Charge
2
ID=25A
-
21
nC
Qgs
Gate-Source Charge
VDS=20V
-
2.8
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=5V
-
16
nC
td(on)
Turn-on Delay Time
2
VDS=15V
-
8
-
ns
tr
Rise Time
ID=20A
-
75
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
22
-
ns
tf
Fall Time
RD=0.75Ω
-20
-
ns
Ciss
Input Capacitance
VGS=0V
-
605
-
pF
Coss
Output Capacitance
VDS=25V
-
415
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
195
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
IS
Continuous Source Current ( Body Diode )
VD=VG=0V , VS=1.26V
-
50
A
ISM
Pulsed Source Current ( Body Diode )
1
-
180
A
VSD
Forward On Voltage
2
Tj=25℃, IS=50A, VGS=0V
-
1.26
V
Drain-Source Avalanche Ratings
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
EAS
Single Pulse Avalanche Energy
2
VDD=25V, ID=35A, L=100uH
-
61
mJ
IAR
Avalanche Current
VGS=10V
-
35
A
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
AP60L02GH/J
±100
± 20V
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AP60L02GP | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP60L02GS | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP60L02P | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP60L02S | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP60N03GH | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Low On-Resistance Fast Switching |
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