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参数资料
| 型号： | AP60L02GJ |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 50 A, 25 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 |
| 封装： | LEAD FREE PACKAGE-3 |
| 文件页数： | 5/6页 |
| 文件大小： | 80K |
| 代理商： | AP60L02GJ |
AP60L02GH/J
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
Fig 11. Forward Characteristic of
Fig 12. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
0
1
2
3
-50
0
50
100
150
T j , Junction Temperature(
o C)
V
GS
(t
h
)(V
)
0.1
1
10
100
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
V SD (V)
I
S
(A)
T j =25
o C
T j =150
o C
100
1000
10000
1
6
11
16
21
V DS (V)
C
(
p
F)
f=1.0MHz
Ciss
Coss
Crss
0
2
4
6
8
10
12
14
16
0
1020
304050
Q G , Total Gate Charge (nC)
V
GS
,
G
a
te
to
S
o
u
rce
Voltage
(
V
)
I D =25A
V DS =12V
V DS =16V
V DS =20V
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AP60L02GP | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP60L02GS | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP60L02P | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP60L02S | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP60N03GH | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Low On-Resistance Fast Switching |
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