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参数资料
| 型号： | AP60T03AP |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 45 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | TO-220, 3 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 78K |
| 代理商： | AP60T03AP |
Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
30
-
V
ΔBV
DSS/ΔTj
Breakdown Voltage Temperature Coefficient
Reference to 25℃, ID=1mA
-
0.026
-V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V, ID=20A
-
12
mΩ
VGS=4.5V, ID=15A
-
25
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
2
VDS=10V, ID=10A
-
25
-
S
IDSS
Drain-Source Leakage Current (Tj=25
oC)
VDS=30V, VGS=0V
-
1
uA
Drain-Source Leakage Current (Tj=175
oC)
VDS=24V ,VGS=0V
-
250
uA
IGSS
Gate-Source Leakage
VGS= ± 20V
-
±100
nA
Qg
Total Gate Charge
2
ID=20A
-
11.6
-
nC
Qgs
Gate-Source Charge
VDS=24V
-
3.9
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
7
-
nC
td(on)
Turn-on Delay Time
2
VDS=15V
-
8.8
-
ns
tr
Rise Time
ID=20A
-
57.5
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
18.5
-
ns
tf
Fall Time
RD=0.75Ω
-
6.4
-
ns
Ciss
Input Capacitance
VGS=0V
-
1135
-
pF
Coss
Output Capacitance
VDS=25V
-
200
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
135
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
VSD
Forward On Voltage
2
IS=45A, VGS=0V
-
1.3
V
trr
Reverse Recovery Time
IS=20A, VGS=0V,
-
23.3
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
16
-
nC
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
AP60T03AS/P
相关PDF资料 |
PDF描述 |
|---|---|
| AP60T10GP | 67 A, 100 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| AP60T10GS | 67 A, 100 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AP60U03GH | 40 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| AP62T02GJ | 48 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 |
| AP62T02GH | 48 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AP60T03AS | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement Low Gate Charge |
| AP60T03GH | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP60T03GH/J | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP60T03GH-HF-3TR | 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET NCH 30V 12MOHM TO-252 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET, NCH, 30V, 12MOHM, TO-252 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET, NCH, 30V, 12MOHM, TO-252, Transistor Polarity:N Channel, Continuous Drain Current Id:45A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.012ohm, Rds(on) Test Voltage Vgs:10V, Power Dissipation Pd:44W, Operating , RoHS Compliant: Yes 制造商:APEC (ADVANCED POWER ELECTRONICS CORP) 功能描述:MOSFET, NCH, 30V, 12MOHM, TO-252, Transistor Polarity:N Channel, Continuous Drai |
| AP60T03GI | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement Low Gate Charge |
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