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参数资料
| 型号： | AP60U02GH |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 40 A, 25 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封装： | ROHS COMPLIANT PACKAGE-3 |
| 文件页数： | 2/5页 |
| 文件大小： | 126K |
| 代理商： | AP60U02GH |
Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
25
-
V
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V, ID=24A
-
12
mΩ
VGS=4.5V, ID=16A
-
20
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=30A
-
29
-
S
IDSS
Drain-Source Leakage Current
VDS=25V, VGS=0V
-
1
uA
IGSS
Gate-Source Leakage
VGS= ±20V
-
±100
nA
Qg
Total Gate Charge
2
ID=30A
-
15
24
nC
Qgs
Gate-Source Charge
VDS=20V
-
3.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
9.5
-
nC
td(on)
Turn-on Delay Time
2
VDS=15V
-
8
-
ns
tr
Rise Time
ID=30A
-
90
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
22
-
ns
tf
Fall Time
RD=0.5Ω
-9
-
ns
Ciss
Input Capacitance
VGS=0V
-
1070
2180
pF
Coss
Output Capacitance
VDS=25V
-
160
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
155
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
VSD
Forward On Voltage
2
IS=24A, VGS=0V
-
1.2
V
trr
Reverse Recovery Time
2
IS=10A, VGS=0V,
-
22
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
13
-
nC
Notes:
1.Pulse width limited by max. junction temperature.
2.Pulse test
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2/4
AP60U02GH
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
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