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参数资料
| 型号： | AP60U02GH |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 40 A, 25 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封装： | ROHS COMPLIANT PACKAGE-3 |
| 文件页数： | 3/5页 |
| 文件大小： | 126K |
| 代理商： | AP60U02GH |
AP60U02GH
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3/4
0
20
40
60
80
100
01
234
56
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C =175
o C
10V
7.0V
5.0V
4.5V
V G =3.0V
0
30
60
90
120
150
01
23
45
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C =25
o C
10V
7.0V
5.0V
4.5V
V G =3.0V
0.6
1
1.4
1.8
-50
0
50
100
150
200
T j , Junction Temperature (
o C)
N
o
rmalize
d
R
DS(ON)
I D =24A
V G =10V
0
10
20
30
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V SD , Source-to-Drain Voltage (V)
I
S(A
)
T j =25
o C
T j =175
o C
0.0
0.6
1.2
1.8
-50
0
50
100
150
200
T j , Junction Temperature (
o C )
N
o
rmalize
d
V
GS(t
h)
(V
)
8
10
12
14
16
18
20
24
68
10
VGS , Gate-to-Source Voltage (V)
R
DS(ON)
(m
Ω
)
I D =16 A
T C =25 ℃
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AP60U03GH | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Low On-resistance, Simple Drive Requirement |
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