参数资料
| 型号： | AP6503SP-13 |
| 厂商： | Diodes Inc |
| 文件页数： | 3/15页 |
| 文件大小： | 0K |
| 描述： | IC REG BUCK SYNC ADJ 3A 8SO |
| 标准包装： | 1 |
| 类型： | 降压（降压） |
| 输出类型： | 可调式 |
| 输出数： | 1 |
| 输出电压： | 0.925 V ~ 20 V |
| 输入电压： | 4.75 V ~ 23 V |
| PWM 型： | 电流模式 |
| 频率 - 开关： | 340kHz |
| 电流 - 输出： | 3A |
| 同步整流器： | 是 |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm Width）裸露焊盘 |
| 包装： | 标准包装 |
| 供应商设备封装： | 8-SO 裸露焊盘 |
| 其它名称： | AP6503SP-13DIDKR |
AP6503
Absolute Maximum Ratings (Note 4) (@T A = +25°C, unless otherwise specified.)
Symbol
V IN
V SW
V BS
V FB
V EN
V COMP
T ST
T J
T L
Parameter
Supply Voltage
Switch Node Voltage
Bootstrap Voltage
Feedback Voltage
Enable/UVLO Voltage
Comp Voltage
Storage Temperature
Junction Temperature
Lead Temperature
Rating
-0.3 to +26
-1.0 to V IN +0.3
V SW -0.3 to V SW +6
-0.3V to +6
-0.3V to +6
-0.3V to +6
-65 to +150
+150
+260
Unit
V
V
V
V
V
V
°C
°C
°C
ESD Susceptibility (Note 5)
HBM
MM
Human Body Model
Machine Model
3
250
kV
V
Notes:
4. Stresses greater than the 'Absolute Maximum Ratings' specified above, may cause permanent damage to the device. These are stress ratings only;
functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability may
be affected by exposure to absolute maximum rating conditions for extended periods of time.
5. Semiconductor devices are ESD sensitive and may be damaged by exposure to ESD events. Suitable ESD precautions should be taken when
handling and transporting these devices.
Thermal Resistance (Note 6)
Symbol
θ JA
θ JC
Parameter
Junction to Ambient
Junction to Case
Rating
74
16
Unit
°C/W
°C/W
Note:
6. Test condition for SO-8EP: Measured on approximately 1” square of 1 oz copper
Recommended Operating Conditions (Note 7) (@T A = +25°C, unless otherwise specified.)
Symbol
V IN
T A
Parameter
Supply Voltage
Operating Ambient Temperature Range
Min
4.7
-40
Max
23
+85
Unit
V
°C
Note:
7. The device function is not guaranteed outside of the recommended operating conditions.
AP6503
Document number: DS35077 Rev. 5 - 2
3 of 15
January 2013
? Diodes Incorporated
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