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参数资料
| 型号： | AP6800GEO |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 6000 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | ROHS COMPLIANT, TSSOP-8 |
| 文件页数： | 1/4页 |
| 文件大小： | 107K |
| 代理商： | AP6800GEO |
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼
▼ Low on-resistance
BVDSS
20V
▼
▼ Capable of 2.5V gate drive
RDS(ON)
20mΩ
▼
▼ Optimal DC/DC battery application
ID
6
▼
▼ RoHS compliant
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TA=25℃
A
ID@TA=70℃
A
IDM
A
PD@TA=25℃
W
W/℃
TSTG
℃
TJ
℃
Symbol
Value
Unit
Rthj-a
Thermal Resistance Junction-ambient
3
Max.
125
℃
/W
Data and specifications subject to change without notice
Thermal Data
Parameter
Storage Temperature Range
Total Power Dissipation
1
-55 to 150
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
0.008
Drain Current
3, V
GS @ 4.5V
4.7
Pulsed Drain Current
1
30
Gate-Source Voltage
±10
Drain Current
3, V
GS @ 4.5V
6.0
Parameter
Rating
Drain-Source Voltage
20
200109061-1/4
AP6800GEO
Pb Free Plating Product
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
D2
S2
G2
D1
S1
G1
TSSOP-8
S1
G1
D1
S2
G2
D2
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