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参数资料
| 型号： | AP6910GSM-HF |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 30 V, 0.0158 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | HALOGEN FREE AND ROHS COMPLIANT, SOP-8 |
| 文件页数： | 2/7页 |
| 文件大小： | 84K |
| 代理商： | AP6910GSM-HF |
CH-1 Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
30
-
V
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V, ID=9A
-
15.8
mΩ
VGS=4.5V, ID=6A
-
23
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=5V, ID=9A
-
16
-
S
IDSS
Drain-Source Leakage Current
VDS=30V, VGS=0V
-
1
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
+100
nA
Qg
Total Gate Charge
2
ID=9A
-
6
9.6
nC
Qgs
Gate-Source Charge
VDS=15V
-
1.4
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
3.4
-
nC
td(on)
Turn-on Delay Time
2
VDS=15V
-
6
-
ns
tr
Rise Time
ID=9A
-
30
-
ns
td(off)
Turn-off Delay Time
RG=3Ω,VGS=10V
-
16
-
ns
tf
Fall Time
RD=1.7Ω
-5
-
ns
Ciss
Input Capacitance
VGS=0V
-
400
640
pF
Coss
Output Capacitance
VDS=25V
-
135
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
80
-
pF
Rg
Gate Resistance
f=1.0MHz
-
3.5
5.3
Ω
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
VSD
Forward On Voltage
2
IS=1A, VGS=0V
-
1
V
trr
Reverse Recovery Time
2
IS=9A, VGS=0V
-
20
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
13
-
nC
AP6910GSM-HF
2
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