参数资料
型号: AP6910GSM-HF
厂商: ADVANCED POWER ELECTRONICS CORP
元件分类: JFETs
英文描述: 30 V, 0.0158 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封装: HALOGEN FREE AND ROHS COMPLIANT, SOP-8
文件页数: 5/7页
文件大小: 84K
代理商: AP6910GSM-HF
AP6910GSM-HF
Channel-1
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
5
Q
VG
4.5V
QGS
QGD
QG
Charge
0
2
4
6
8
10
0246
8
10
12
Q G , Total Gate Charge (nC)
V
GS
,
G
a
te
to
S
o
u
rc
e
Voltage
(
V
)
I D =9 A
V DS =15 V
0
200
400
600
800
1
5
9
1317
2125
29
V DS , Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
C iss
C oss
C rss
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
rmal
Re
spon
se
(
R
th
ja
)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=135
oC/W
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0.01
0.1
1
10
100
0.01
0.1
1
10
100
V DS , Drain-to-Source Voltage (V)
I
D
(A
)
1ms
10ms
100ms
1s
10s
DC
T A =25
o C
Single Pulse
td(on) tr
td(off) t
f
VDS
VGS
10%
90%
Operation in this area
limited by RDS(ON)
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