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参数资料
| 型号： | AP7811GM |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 11.8 A, 25 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, SOP-8 |
| 文件页数： | 1/6页 |
| 文件大小： | 80K |
| 代理商： | AP7811GM |
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼
▼ Low On-Resistance
BVDSS
25V
▼
▼ Fast Switching
RDS(ON)
12mΩ
▼
▼ Simple Drive Requirement
ID
11.8A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TA=25℃
A
ID@TA=70℃
A
IDM
A
PD@TA=25℃
W
W/℃
TSTG
℃
TJ
℃
Symbol
Value
Unit
Rthj-amb
Thermal Resistance Junction-ambient
3
Max.
50
℃/W
Data and specifications subject to change without notice
Thermal Data
Parameter
Storage Temperature Range
Total Power Dissipation
2.5
-55 to 150
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
0.02
Continuous Drain Current
3
9.4
Pulsed Drain Current
1
30
Gate-Source Voltage
Continuous Drain Current
3
11.8
Parameter
Rating
Drain-Source Voltage
25
20020507
AP7811GM
Pb Free Plating Product
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is universally preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
G
D
S
±12
S
G
D
SO-8
G
D
S
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