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参数资料
| 型号： | AP80N30W |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 36 A, 300 V, 0.066 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, TO-3P, 3 PIN |
| 文件页数： | 4/4页 |
| 文件大小： | 95K |
| 代理商： | AP80N30W |
AP80N30W
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
0
2
4
6
8
10
12
0
40
80
120
160
Q G , Total Gate Charge (nC)
V
GS
,
G
a
te
to
S
o
u
rc
e
Voltage
(
V
)
I D =30A
V DS =240V
Q
VG
10V
QGS
QGD
QG
Charge
0
2000
4000
6000
8000
1
6
11
16
21
26
31
36
V DS ,Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
C iss
C oss
C rss
0.001
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
rmal
Re
spon
se
(
R
th
jc
)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0.1
1
10
100
1000
0.1
1
10
100
1000
V DS , Drain-to-Source Voltage (V)
I
D
(A
)
T c =25
o C
Single Pulse
100us
1ms
10ms
100ms
DC
Operation in this
area limited by
RDS(ON)
td(on) tr
td(off) tf
VDS
VGS
10%
90%
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AP80N30W_10 | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP80T10GP-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP80T10GR-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP8-100BLK | 制造商:JSC Wire & Cable 功能描述:Hook-Up Wire; No. of Conductors:1 |
| AP-8-11 | 功能描述:扬声器连接器 FEMALE CABLE CONN RoHS:否 制造商:Neutrik 标准:Speakon, HPC 型式:Male 位置/触点数量:2 端接类型: 安装风格:PCB 方向:Vertical 触点电镀: 颜色: 触点材料: 电压额定值: 电流额定值: |
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