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参数资料
| 型号： | AP85G33W |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 85 A, 330 V, N-CHANNEL IGBT |
| 封装： | ROHS COMPLIANT, TO-3P, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 96K |
| 代理商： | AP85G33W |
Advanced Power
N-CHANNEL INSULATED GATE
Electronics Corp.
BIPOLAR TRANSISTOR
Features
VCES
▼ High speed switching
IC
▼ Low saturation voltage
VCE(sat)=1.6V@IC=50A
▼ Built-in diode
Absolute Maximum Ratings
, 1/8" from case for 5 seconds .
Notes:
1.Repetitive rating : Pulse width limited by max . junction temperature .
Thermal Data
Symbol
Rthj-c
Rthj-a
Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Min.
Typ.
Max.
Units
VCES
330
-
V
IGES
-
±100
nA
ICES
--
1
uA
ICES
-
200
uA
VCE(sat)
-
1.6
2.1
V
-
2.3
3
V
VGE(th)
2-
6
V
Qg
-
120
190
nC
Qge
-23
-
nC
Qgc
-60
-
nC
td(on)
-
110
-
ns
tr
-
150
-
ns
td(off)
-
160
-
ns
tf
-
100
200
ns
Eon
-
1.4
-
mJ
Eoff
-1
-
mJ
Cies
-
2800
4500
pF
Coes
-
280
-
pF
Cres
-55
-
pF
Rg
-
3
4.5
VF-1
-
1.3
2
V
VF-2
-
1.6
2.4
V
trr
-60
-
ns
Qrr
-
115
-
nC
Data and specifications subject to change without notice
W
℃
VCC=150V
IDM
Pulse Collector to Emitter Diode Forward Current
40
A
Turn-On Switching Loss
Turn-Off Switching Loss
VCC=200V,
Ic=50A,
VGE=15V,
RG=22,
Inductive Load
▼ RoHS Compliant
ICM
Parameter
200719062-1/3
Operating Junction Temperature Range
Gate-Emitter Charge
Collector-Emitter Saturation Voltage
Collector-Emitter Leakage Current
VGE=15V, IC=100A
TL
VCE=330V, VGE=0V
VGE=15V
Output Capacitance
Fall Time
Turn-off Delay Time
PD@TC=25℃
TJ
Gate Threshold Voltage
Maximum Power Dissipation
Test Conditions
Storage Temperature Range
150
Collect-to-Emitter Breakdown Voltage
℃
VCE=25V
f=1.0MHz
-55 to 150
150
VGE=15V, IC=50A
IC=50A
VGE=±30V, VCE=0V
VGE=0V, IC=250uA
Value
Pulsed Collector Current
1
VGE
IC@TC=25℃
Continuous Collector Current
Gate-Emitter Voltage
A
V
200
A
±30
85
AP85G33W
Symbol
VCES
330V
85A
Rating
Collector-Emitter Voltage
Units
V
330
0.833
40
Units
℃
/W
℃
/W
TSTG
Gate-Collector Charge
Turn-on Delay Time
Total Gate Charge
Parameter
Gate-to-Emitter Leakage Current
Collector-Emitter Leakage Current
Thermal Resistance Junction-Case
Parameter
Thermal Resistance Junction-Ambient
℃
Maximum Lead Temp. for Soldering Purposes
300
Input Capacitance
Reverse Recovery Time
IF=10A
Reverse Recovery Charge
di/dt = 100 A/s
Forward Voltage
IF=20A
Forward Voltage
IF=40A
Pb Free Plating Product
VCE=300V, VGE=0V,TC=125℃
Collector-Emitter Diode
Gate Resistance
f=1.0MHz
VGE=0V
Reverse Transfer Capacitance
Rise Time
VCE=VGE, IC=1mA
G
C
E
G
C
E
TO-3P
C
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