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参数资料
| 型号： | AP88N30W |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 48 A, 300 V, 0.048 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, TO-3P, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 96K |
| 代理商： | AP88N30W |
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Simple Drive Requirement
BVDSS
300V
▼ Lower On-resistance
RDS(ON)
48mΩ
▼ High Speed Switching
ID
48A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
IDM
A
IDR
A
IDR(PULSE)
A
PD@TC=25℃
W
W/℃
IAR
Avalanche Current
A
EAR
Single Pulse Avalanche Energy
3
mJ
TSTG
℃
TJ
℃
Symbol
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
0.4
℃
/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
40
℃
/W
Data and specifications subject to change without notice
Thermal Data
Parameter
Storage Temperature Range
Total Power Dissipation
312
-55 to 150
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
1.2
30
45
Pulsed Drain Current
1
160
Gate-Source Voltage
+30
Continuous Drain Current, VGS @ 10V
48
Parameter
Rating
Drain-Source Voltage
300
1
AP88N30W
RoHS-compliant Product
201009158
Body-Drain Diode Reverse Drain Current
Body-Drain Diode Reverse Drain Peak Current
1
48
160
G
D
S
G
D
S
TO-3P
AP88N30 from APEC provide the designer with the best combination of
fast switching, low on-resistance and cost-effectiveness.
The TO-3P package is preferred for commercial & industrial applications
with higher power level preclusion than TO-220 device.
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