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参数资料
| 型号： | AP88N30W |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 48 A, 300 V, 0.048 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, TO-3P, 3 PIN |
| 文件页数： | 3/4页 |
| 文件大小： | 96K |
| 代理商： | AP88N30W |
AP88N30W
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
40
42
44
46
48
50
456789
10
V GS Gate-to-Source Voltage (V)
R
DS(ON)
(m
Ω
)
T C =25
o C
0.3
0.8
1.3
1.8
2.3
2.8
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
R
DS(ON)
I D =44A
V G =10V
0
10
20
30
40
50
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
I
S(A
)
T j =25
o C
T j =150
o C
0.4
0.6
0.8
1
1.2
1.4
-50
0
50
100
150
T j ,Junction Temperature (
o C)
N
o
rmalize
d
V
GS(t
h)
(V
)
I D =44A
0
40
80
120
160
0.0
4.0
8.0
12.0
16.0
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C =25
o C
10V
8.0V
7.0V
6.0V
V G =5.0V
0
20
40
60
80
100
0.0
4.0
8.0
12.0
16.0
20.0
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C =150
o C
10V
8.0V
7.0V
6.0V
V G =5.0V
I D =22A
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