参数资料
型号: AP85T08GP
厂商: ADVANCED POWER ELECTRONICS CORP
元件分类: JFETs
英文描述: 75 A, 80 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封装: ROHS COMPLIANT, TO-220, 3 PIN
文件页数: 1/6页
文件大小: 239K
代理商: AP85T08GP
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Simple Drive Requirement
BVDSS
80V
▼ Lower On-resistance
RDS(ON)
13mΩ
▼ Fast Switching Characteristic
ID
75A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TC=100℃
A
IDM
A
PD@TC=25℃
W
W/℃
EAS
Single Pulse Avalanche Energy
3
mJ
IAR
Avalanche Current
A
TSTG
TJ
Symbol
Value
Units
Rthj-c
Thermal Resistance Junction-case
Max.
0.9
/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
62
/W
Data and specifications subject to change without notice
Thermal Data
Parameter
Storage Temperature Range
Total Power Dissipation
138
-55 to 150
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
1.11
Continuous Drain Current, VGS @ 10V
48
Pulsed Drain Current
1
260
Gate-Source Voltage
±20
Continuous Drain Current, VGS @ 10V
75
Parameter
Rating
Drain-Source Voltage
80
200912072-1/4
AP85T08GS/P
RoHS-compliant Product
450
30
G
D
S
The Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-263 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP85T08GP) are available for low-profile applications.
G D
S
TO-263(S)
G
D
S
TO-220(P)
相关PDF资料
PDF描述
AP86T02GJ 75 A, 25 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
AP86T02GH 75 A, 25 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
AP86T03GJ 75 A, 30 V, 0.0065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
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