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参数资料
| 型号： | AP85T08GP |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 75 A, 80 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | ROHS COMPLIANT, TO-220, 3 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 239K |
| 代理商： | AP85T08GP |
Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=1mA
80
-
V
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V, ID=45A
-
13
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=45A
-
70
-
S
IDSS
Drain-Source Leakage Current (Tj=25
oC)
VDS=80V, VGS=0V
-
10
uA
Drain-Source Leakage Current (Tj=150
oC)
VDS=64V ,VGS=0V
-
100
uA
IGSS
Gate-Source Leakage
VGS= ±20V
-
±100
nA
Qg
Total Gate Charge
2
ID=45A
-
63
100
nC
Qgs
Gate-Source Charge
VDS=64V
-
23
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
38
-
nC
td(on)
Turn-on Delay Time
2
VDS=40V
-
30
-
ns
tr
Rise Time
ID=45A
-
100
-
ns
td(off)
Turn-off Delay Time
RG=10Ω,VGS=10V
-
144
-
ns
tf
Fall Time
RD=0.89Ω
-
173
-
ns
Ciss
Input Capacitance
VGS=0V
-
6300
10080
pF
Coss
Output Capacitance
VDS=25V
-
670
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
350
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.1
1.7
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
VSD
Forward On Voltage
2
IS=45A, VGS=0V
-
1.3
V
trr
Reverse Recovery Time
2
IS=20A, VGS=0V
-
47
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
86
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Starting Tj=25
oC , V
DD=30V , L=1mH , RG=25Ω , IAS=30A.
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2/4
AP85T08GS/P
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AP85T08GP-HF-3TB | 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET NCH 80V 13MOHM TO-220 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET, NCH, 80V, 13MOHM, TO-220 制造商:APEC (ADVANCED POWER ELECTRONICS CORP) 功能描述:MOSFET, NCH, 80V, 13MOHM, TO-220, Transistor Polarity:N Channel, Continuous Drai |
| AP85T08GS-HF-3TR | 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET NCH 80V 13MOHM TO-263 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET, NCH, 80V, 13MOHM, TO-263 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET, NCH, 80V, 13MOHM, TO-263, Transistor Polarity:N Channel, Continuous Drain Current Id:75A, Drain Source Voltage Vds:80V, On Resistance Rds(on):0.013ohm, Rds(on) Test Voltage Vgs:10V, Power Dissipation Pd:138W, Operating , RoHS Compliant: Yes 制造商:APEC (ADVANCED POWER ELECTRONICS CORP) 功能描述:MOSFET, NCH, 80V, 13MOHM, TO-263, Transistor Polarity:N Channel, Continuous Drai |
| AP85T10AGI-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP85T10AGP-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP85T10GP-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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