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参数资料
| 型号： | AP85U03GH-HF |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 75 A, 30 V, 0.0055 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封装： | HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 |
| 文件页数： | 3/4页 |
| 文件大小： | 96K |
| 代理商： | AP85U03GH-HF |
AP85U03GH-HF
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
0
20
40
60
80
100
0.0
2.0
4.0
6.0
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C =175
o C
10V
7 .0V
5.0V
4.5 V
V G =3.0V
0
40
80
120
160
200
0.0
2.0
4.0
6.0
8.0
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C =25
o C
10V
7.0 V
5.0V
4.5 V
V G = 3.0 V
0.4
0.8
1.2
1.6
2.0
-50
0
50
100
150
200
T j , Junction Temperature (
o C)
N
o
rmalize
d
R
DS(ON)
I D =40A
V G =10V
0
10
20
30
40
50
0
0.4
0.8
1.2
1.6
V SD , Source-to-Drain Voltage (V)
I
S(A
)
T j =25
o C
T j =175
o C
2
4
6
8
10
12
14
2468
10
V GS , Gate-to-Source Voltage (V)
R
DS(ON)
(m
Ω
)
I D =30A
T C =25
o C
0.0
0.4
0.8
1.2
1.6
-50
0
50
100
150
200
T j , Junction Temperature (
o C)
N
o
rmalize
d
V
GS(t
h)
(V
)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AP85U03GM-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Ultra_Low On-resistance, Simple Drive Requirement |
| AP85U03GMT | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP85U03GMT-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, SO-8 Compatible |
| AP85U03GP-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Low On-resistance, Simple Drive Requirement |
| AP8641 | 制造商:American Power Conversion Corp (APC by Schneider Electric) 功能描述:RACK PDU 2G, SWITCHED PLUS, ZE 制造商:Schneider Electric 功能描述:RACK PDU 2G, SWITCHED PLUS, ZEROU, 30A, 200/208V, (21) C13 & - Bulk |
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