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参数资料
| 型号： | AP90T03P |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 75 A, 30 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | ROHS COMPLIANT, TO-220, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 146K |
| 代理商： | AP90T03P |
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Lower On- resistance
BVDSS
30V
▼ Simple Drive Requirement
RDS(ON)
4mΩ
▼ Fast Switching Characteristic
ID
75A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@Tc=25℃
A
ID@Tc=100℃
A
IDM
A
PD@Tc=25℃
W
W/℃
TSTG
℃
TJ
℃
Symbol
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
1.3
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
62
℃/W
Data and specifications subject to change without notice
Thermal Data
Parameter
Storage Temperature Range
Total Power Dissipation
96
-55 to 150
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
0.7
Continuous Drain Current, VGS@10V
63
Pulsed Drain Current
1
350
Gate-Source Voltage
±20
Continuous Drain Current, VGS@10V
3
75
Parameter
Rating
Drain-Source Voltage
30
200802183
1
AP90T03P
RoHS-compliant Product
G
D
S
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
The TO-220 package is widely preferred for commercial-industrial
power applications and suited for low voltage applications such as
DC/DC converters.
G
D
S
TO-220(P)
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