- 您现在的位置：买卖IC网 > PDF目录48366 > AP90T03P (ADVANCED POWER ELECTRONICS CORP) 75 A, 30 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB PDF资料下载
参数资料
| 型号： | AP90T03P |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 75 A, 30 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | ROHS COMPLIANT, TO-220, 3 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 146K |
| 代理商： | AP90T03P |
Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=1mA
30
-
V
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V, ID=45A
-
4
mΩ
VGS=4.5V, ID=30A
-
6
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
0.8
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=30A
-
55
-
S
IDSS
Drain-Source Leakage Current
VDS=30V, VGS=0V
-
1
uA
Drain-Source Leakage Current (Tj=150
oC)
VDS=24V ,VGS=0V
-
25
uA
IGSS
Gate-Source Leakage
VGS= ±20V
-
±100
nA
Qg
Total Gate Charge
2
ID=40A
-
60
96
nC
Qgs
Gate-Source Charge
VDS=24V
-
8.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
38
-
nC
td(on)
Turn-on Delay Time
2
VDS=15V
-
14
-
ns
tr
Rise Time
ID=30A
-
83
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
66
-
ns
tf
Fall Time
RD=0.5Ω
-
120
-
ns
Ciss
Input Capacitance
VGS=0V
-
4090
6540
pF
Coss
Output Capacitance
VDS=25V
-
1010
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
890
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
VSD
Forward On Voltage
2
IS=45A, VGS=0V
-
1.3
V
trr
Reverse Recovery Time
2
IS=30A, VGS=0V,
-
51
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
63
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Package limitation current is 75A, calculated continuous current
based on maximum allowable junction temperature is 125A.
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
AP90T03P
相关PDF资料 |
PDF描述 |
|---|---|
| AP9120GJ-HF | 8 A, 200 V, 0.68 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251 |
| AP9120GH-HF | 8 A, 200 V, 0.68 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252 |
| AP92T03GI-HF | 80 A, 30 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| AP9406MP | 30 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET |
| AP9408AGM | 30 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AP90T06GP-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP90T10GP-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP90X | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:KILOVAC AP90X-90 Amps |
| AP90X-08 | 功能描述:AP90X-08=RELAY VACUUM 制造商:te connectivity aerospace, defense and marine 系列:* 零件状态:有效 标准包装:1 |
| AP90XC57 | 功能描述:通用继电器 RELAY VACUUM SPST-N RoHS:否 制造商:Omron Electronics 触点形式:1 Form A (SPST-NO) 触点电流额定值:150 A 线圈电压:24 VDC 线圈电阻:144 Ohms 线圈电流:167 mA 切换电压:400 V 安装风格:Chassis 触点材料: |
发布紧急采购，3分钟左右您将得到回复。