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参数资料
| 型号： | AP90T03P |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 75 A, 30 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | ROHS COMPLIANT, TO-220, 3 PIN |
| 文件页数： | 4/5页 |
| 文件大小： | 146K |
| 代理商： | AP90T03P |
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
AP90T03P
td(on) tr
td(off) t
f
VDS
VGS
10%
90%
Q
VG
4.5V
QGS
QGD
QG
Charge
100
1000
10000
1
5
9
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
C
(
pF)
f=1.0MHz
Ciss
Coss
Crss
0
2
4
6
8
10
12
14
0
20
40
60
80
100
120
Q G , Total Gate Charge (nC)
V
GS
,G
ate
to
S
ou
rc
eVoltage
(
V
)
V DS =15V
V DS =20V
V DS =24V
I D =40
1
10
100
1000
0.1
1
10
100
V DS ,Drain-to-Source Voltage (V)
I D
(A
)
T c =25
o C
Single
100us
1ms
10ms
100ms
DC
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
N
ormalize
dT
h
ermal
Re
spon
se
(
R
th
jc
)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
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