参数资料
型号: AP9120GJ-HF
厂商: ADVANCED POWER ELECTRONICS CORP
元件分类: JFETs
英文描述: 8 A, 200 V, 0.68 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251
封装: HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
文件页数: 2/4页
文件大小: 62K
代理商: AP9120GJ-HF
AP9120GH/J-HF
Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
-200
-
V
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=-10V, ID=-4A
-
680
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-2
-
-4
V
gfs
Forward Transconductance
VDS=-10V, ID=-5A
-
7
-
S
IDSS
Drain-Source Leakage Current
VDS=-200V, VGS=0V
-
-25
uA
Drain-Source Leakage Current (Tj=125
oC) V
DS=-160V, VGS=0V
-
-250
uA
IGSS
Gate-Source Leakage
VGS= +20V, VDS=0V
-
+100
nA
Qg
Total Gate Charge
2
ID=-5A
-
35
56
nC
Qgs
Gate-Source Charge
VDS=-160V
-
6
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-10V
-
15
-
nC
td(on)
Turn-on Delay Time
2
VDS=-100V
-
13.5
-
ns
tr
Rise Time
ID=-5A
-
16
-
ns
td(off)
Turn-off Delay Time
RG=10Ω
-52
-
ns
tf
Fall Time
VGS=-10V
-
25
-
ns
Ciss
Input Capacitance
VGS=0V
-
1210
-
pF
Coss
Output Capacitance
VDS=-25V
-
170
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
45
-
pF
Rg
Gate Resistance
f=1.0MHz
-
3.6
5.4
Ω
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
VSD
Forward On Voltage
2
IS=-5A, VGS=0V
-
-1.3
V
trr
Reverse Recovery Time
2
IS=-5A, VGS=0V,
-
200
-
ns
Qrr
Reverse Recovery Charge
dI/dt=-100A/s
-
2
-
uC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
3.Surface mounted on 1 in
2 copper pad of FR4 board
2
相关PDF资料
PDF描述
AP9120GH-HF 8 A, 200 V, 0.68 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252
AP92T03GI-HF 80 A, 30 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
AP9406MP 30 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET
AP9408AGM 30 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET
AP9412AGM 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET
相关代理商/技术参数
参数描述
AP9135 制造商:American Power Conversion Corp (APC by Schneider Electric) 功能描述:DATA CENTER OPERATION:ENERGY C 制造商:Schneider Electric 功能描述:STRUXUREWARE OPERATIONS: ENERGY COST LICENSE - Bulk
AP91352MN1-DT8-7 功能描述:IC LOAD SWITCH 12WQFN 制造商:diodes incorporated 系列:- 包装:剪切带(CT) 零件状态:有效 开关类型:通用 输出数:1 比率 - 输入:输出:1:1 输出配置:高端 输出类型:N 通道 接口:开/关 电压 - 负载:3.6 V ~ 12 V 电压 - 电源(Vcc/Vdd):不需要 电流 - 输出(最大值):2.5A 导通电阻(典型值):50 毫欧 输入类型:非反相 特性:压摆率受控型 故障保护:限流(固定),超温,过压,UVLO 工作温度:-40°C ~ 85°C(TA) 封装/外壳:12-WFQFN 裸露焊盘 供应商器件封装:W-QFN3020-12 标准包装:1
AP91605000 制造商:Schneider Electric 功能描述:Data Center Operation: IT Optimize 5000 Rack License
AP916110 制造商:Schneider Electric 功能描述:Data Center Operation: IT Power Control 10 Rack License
AP9161100 制造商:Schneider Electric 功能描述:Data Center Operation: IT Power Control 100 Rack License