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参数资料
| 型号： | AP9120GJ-HF |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 8 A, 200 V, 0.68 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251 |
| 封装： | HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 |
| 文件页数： | 3/4页 |
| 文件大小： | 62K |
| 代理商： | AP9120GJ-HF |
AP9120GH/J-HF
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
0
4
8
12
16
20
0
4
8
1216
2024
-V DS , Drain-to-Source Voltage (V)
-I
D
,
Drain
Current
(A)
T C =25
o C
-10V
-8.0V
-7.0V
-6.0V
V G = - 5.0V
0
2
4
6
8
10
12
0
4
8
12
16
20
-V DS , Drain-to-Source Voltage (V)
-I
D
,
Drain
Current
(A)
T C = 150
o C
-10V
-8.0V
-7.0V
-6.0V
V G = -5.0V
500
540
580
620
660
700
456789
10
-V GS , Gate-to-Source Voltage (V)
R
DS(
ON)
(m
Ω
)
I D =-4 A
T C =25 ℃
0.4
0.9
1.4
1.9
2.4
-50
0
50
100
150
T j , Junction Temperature (
o C)
Norm
alize
d
R
DS(
ON)
I D =- 4 A
V G =-10V
0.3
0.7
1.1
1.5
-50
0
50
100
150
T j , Junction Temperature (
o C)
Norm
alize
d
-
V
GS(
th)
(V)
0
1
2
3
4
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
-I
S(A)
T j =25
o C
T j =150
o C
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