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参数资料
| 型号： | AP9452AGG-HF |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 20 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 |
| 文件页数： | 3/4页 |
| 文件大小： | 93K |
| 代理商： | AP9452AGG-HF |
AP9452AGG-HF
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
0
4
8
12
16
20
01
23
4
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T A =25
o C
5.0V
4.5V
3.5V
2.5V
V GS =2.0V
0
4
8
12
16
20
012
3
4
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T A =150
o C
5.0V
4.5V
3.5V
2.5V
V GS = 2.0 V
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
R
DS(ON)
V GS =4.5V
I D =4A
0
1
2
3
4
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V SD , Source -to-Drain Voltage (V)
I
S(A
)
T j =25
o C
T j =150
o C
0
0.4
0.8
1.2
1.6
-50
0
50
100
150
T j , Junction Temperature (
o C )
N
o
rmalize
d
V
GS(t
h)
(V
)
25
27
29
31
33
35
37
12
34
56
V GS , Gate-to-Source Voltage (V)
R
DS(ON)
(m
Ω
)
I D =3 A
T A =25
o C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AP9452G | 制造商:未知厂家 制造商全称:未知厂家 功能描述:N CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9452GG | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9452GG_08 | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Lower gate charge, Capable of 2.5V gate drive |
| AP9452GG-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Lower gate charge, Capable of 2.5V gate drive |
| AP9452U | 制造商:Schneider Electric 功能描述:SNMP OPC GATEWAY UL - Bulk |
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