参数资料
型号: AP9466GM
厂商: ADVANCED POWER ELECTRONICS CORP
元件分类: JFETs
英文描述: 40 V, 0.0135 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: ROHS COMPLIANT, SOP-8
文件页数: 1/5页
文件大小: 214K
代理商: AP9466GM
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Low On-resistance
BVDSS
40V
▼ Simple Drive Requirement
RDS(ON)
13.5mΩ
▼ Fast Switching Characteristic
ID
10A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TA=25℃
A
ID@TA=70℃
A
IDM
A
PD@TA=25℃
W
W/℃
TSTG
TJ
Symbol
Value
Unit
Rthj-a
Thermal Resistance Junction-ambient
3
Max.
50
/W
Data and specifications subject to change without notice
200810071-1/4
AP9466GM
Rating
40
± 20
10
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Linear Derating Factor
0.02
Storage Temperature Range
Continuous Drain Current
3
8.4
Pulsed Drain Current
1
40
RoHS-compliant Product
Thermal Data
Parameter
Total Power Dissipation
2.5
-55 to 150
Operating Junction Temperature Range
-55 to 150
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is universally preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
S
G
D
SO-8
G
D
S
相关PDF资料
PDF描述
AP9466GS 40 A, 40 V, 0.0135 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
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