参数资料
型号: AP9466GM
厂商: ADVANCED POWER ELECTRONICS CORP
元件分类: JFETs
英文描述: 40 V, 0.0135 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: ROHS COMPLIANT, SOP-8
文件页数: 2/5页
文件大小: 214K
代理商: AP9466GM
Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
40
-
V
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V, ID=10A
-
13.5
VGS=4.5V, ID=6A
-
21
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=10A
-
9.9
-
S
IDSS
Drain-Source Leakage Current (Tj=25
oC)
VDS=40V, VGS=0V
-
1
uA
Drain-Source Leakage Current (Tj=70
oC)
VDS=32V, VGS=0V
-
100
uA
IGSS
Gate-Source Leakage
VGS=±20V
-
±100
nA
Qg
Total Gate Charge
2
ID=10A
-
14.4
23
nC
Qgs
Gate-Source Charge
VDS=32V
-
2.4
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
9.2
-
nC
td(on)
Turn-on Delay Time
2
VDS=20V
-
7.6
-
ns
tr
Rise Time
ID=1A
-
6.4
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
24
-
ns
tf
Fall Time
RD=20Ω
-9
-
ns
Ciss
Input Capacitance
VGS=0V
-
800
1280
pF
Coss
Output Capacitance
VDS=25V
-
170
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
140
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.3
2
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
VSD
Forward On Voltage
2
IS=2.1A, VGS=0V
-
1.2
V
trr
Reverse Recovery Time
2
IS=10A, VGS=0V,
-
29
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
25
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2/4
AP9466GM
3.Surface mounted on 1 in
2 copper pad of FR4 board, t <10sec ; 125 ℃/W when mounted on Min. copper pad.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
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