参数资料
型号: AP9465BGJ
厂商: ADVANCED POWER ELECTRONICS CORP
元件分类: JFETs
英文描述: 20 A, 40 V, 0.032 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
封装: ROHS COMPLIANT PACKAGE-3
文件页数: 3/4页
文件大小: 97K
代理商: AP9465BGJ
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
AP9465BGH/J
0
10
20
30
40
0.0
1.0
2.0
3.0
4.0
5.0
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C =150
o C
10V
7 .0V
5.0V
4.5 V
V G =3.0V
0
10
20
30
40
0.0
1.0
2.0
3.0
4.0
5.0
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C =25
o C
10V
7.0 V
5.0V
4.5 V
V G = 3.0 V
0.4
0.8
1.2
1.6
2.0
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
R
DS(ON)
I D =12A
V G =10V
0
2
4
6
8
10
0
0.4
0.8
1.2
1.6
V SD , Source-to-Drain Voltage (V)
I
S(A
)
T j =25
o C
T j =150
o C
20
24
28
32
36
40
2468
10
V GS , Gate-to-Source Voltage (V)
R
DS(ON)
(m
Ω
)
I D =8A
T C =25
o C
0.6
0.7
0.8
0.9
1.0
1.1
1.2
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
V
GS(t
h)
(V
)
相关PDF资料
PDF描述
AP9465BGH 20 A, 40 V, 0.032 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
AP9467AGH-HF 43 A, 40 V, 0.0115 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
AP9467AGM 40 V, 0.0115 ohm, N-CHANNEL, Si, POWER, MOSFET
AP9467GJ-HF 52 A, 40 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
AP9467GH-HF 52 A, 40 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
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