参数资料
型号: AP9465BGJ
厂商: ADVANCED POWER ELECTRONICS CORP
元件分类: JFETs
英文描述: 20 A, 40 V, 0.032 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
封装: ROHS COMPLIANT PACKAGE-3
文件页数: 4/4页
文件大小: 97K
代理商: AP9465BGJ
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4
AP9465BGH/J
0
1
10
100
0.1
1
10
100
V DS ,Drain-to-Source Voltage (V)
I
D
(A
)
T C =25
o C
Single Pulse
100us
1ms
10ms
100ms
DC
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
rmal
Re
spon
se
(
R
th
jc
)
PDM
Duty Factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor = 0.5
Single Pulse
0
4
8
12
16
0
4
8
12
16
Q G , Total Gate Charge (nC)
V
GS
,
G
a
te
to
S
o
u
rc
e
Voltage
(
V
)
I D =12A
V DS =20V
V DS =24V
V DS =32V
10
100
1000
1
5
9
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
C iss
C oss
C rss
Q
VG
4.5V
QGS
QGD
QG
Charge
0
10
20
30
40
0123456
V GS , Gate-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T j =150
o C
T j =25
o C
V DS =5V
相关PDF资料
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AP9465BGH 20 A, 40 V, 0.032 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
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AP9467GJ-HF 52 A, 40 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
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