参数资料
型号: AP9466GH
厂商: ADVANCED POWER ELECTRONICS CORP
元件分类: JFETs
英文描述: 40 A, 40 V, 0.0135 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
封装: ROHS COMPLIANT PACKAGE-3
文件页数: 1/6页
文件大小: 234K
代理商: AP9466GH
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Low On-resistance
BVDSS
40V
▼ Single Drive Requirement
RDS(ON)
13.5mΩ
▼ Fast Switching Characteristics
ID
40A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TC=100℃
A
IDM
A
PD@TC=25℃
W
W/℃
TSTG
TJ
Symbol
Value
Unit
Rthj-c
Maximum Thermal Resistance, Junction-case
3.4
/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
110
/W
Data and specifications subject to change without notice
200806182
1
AP9466GH/J
RoHS-compliant Product
Parameter
Rating
Drain-Source Voltage
40
Gate-Source Voltage
+ 20
Continuous Drain Current, VGS @ 10V
40
Continuous Drain Current, VGS @ 10V
25
Pulsed Drain Current
1
150
Total Power Dissipation
36.7
-55 to 150
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
0.29
Thermal Data
Parameter
Storage Temperature Range
G
D
S
G
D
S
TO-252(H)
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP9466GJ)
are available for low-profile applications.
G
D
S
TO-251(J)
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