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参数资料
| 型号： | AP9918GJ |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 45 A, 20 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 |
| 封装： | ROHS COMPLIANT PACKAGE-3 |
| 文件页数： | 3/6页 |
| 文件大小： | 217K |
| 代理商： | AP9918GJ |
AP9918GH/J
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
0
20
40
60
80
100
120
01
23
4
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C =25
o C
4.5V
4.0V
3.5V
3.0V
V G =2.5V
0
20
40
60
80
01
234
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C =150
o C
4.5V
4.0V
3.5V
3.0V
V G =2.5V
10
12
14
16
18
20
22
24
26
12
345
V GS , Gate-to-Source Voltage (V)
R
DS(ON)
(m
Ω
)
I D =18 A
T C =25
o C
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
R
DS(ON)
V G =4.5V
I D =18A
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
I
F
(A)
T j =25
o C
T j =150
o C
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
-50
0
50
100
150
Junction Temperature (
o C )
V
GS(t
h)
(V
)
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