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参数资料
| 型号： | AP9918GJ |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 45 A, 20 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 |
| 封装： | ROHS COMPLIANT PACKAGE-3 |
| 文件页数： | 4/6页 |
| 文件大小： | 217K |
| 代理商： | AP9918GJ |
AP9918GH/J
Fig7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
1
10
100
1000
0.1
1
10
100
V DS , Drain-to-Source Voltage (V)
I
D
(A
)
T C =25
o C
Single Pulse
100us
1ms
10ms
100ms
DC
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
No
rm
a
lized
T
h
erm
a
lResp
o
n
se
(
R
th
jc
)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
100
1000
10000
1
5
9
1317
2125
29
V DS , Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
C iss
C oss
C rss
0
2
4
6
8
10
12
0
1020
3040
Q G , Total Gate Charge (nC)
V
GS
,
Ga
te
to
So
urce
Vo
lta
g
e(
V
)
I D =18A
V DS =10V
V DS =12V
V DS =16V
td(on)tr
td(off)t
f
VDS
VGS
10%
90%
Q
VG
4.5V
QGS
QGD
QG
Charge
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