参数资料
型号: AP9923GEO
厂商: ADVANCED POWER ELECTRONICS CORP
元件分类: 小信号晶体管
英文描述: 7000 mA, 12 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封装: ROHS COMPLIANT, THIN, TSSOP-8
文件页数: 3/4页
文件大小: 96K
代理商: AP9923GEO
AP9923GEO
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
10
20
30
40
02
468
-V GS (V)
R
DS(ON)
(m
Ω
)
I D = -6.0A
T A =25
o C
0
5
10
15
20
25
30
01
23
-V DS , Drain-to-Source Voltage (V)
-I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T A =25
o C
-5.0V
-4.5V
-3.5V
-2.5V
V G = -1.8V
0
5
10
15
20
25
30
01
234
-V DS , Drain-to-Source Voltage (V)
-I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T A =150
o C
-5.0V
-4.5V
-3.5V
-2.5V
V G = -1.8 V
0.4
0.7
1.0
1.3
1.6
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
R
DS(ON)
I D = -7.0A
V G = -4.5V
0
2
4
6
8
10
0
0.2
0.4
0.6
0.8
1
1.2
-V SD (V)
-I
S(A
)
T j =25
o C
T j =150
o C
0
0.2
0.4
0.6
0.8
-50
0
50
100
150
T j , Junction Temperature (
o C)
-V
GS(t
h)
(V
)
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相关代理商/技术参数
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