参数资料
型号: AP9923GEO
厂商: ADVANCED POWER ELECTRONICS CORP
元件分类: 小信号晶体管
英文描述: 7000 mA, 12 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封装: ROHS COMPLIANT, THIN, TSSOP-8
文件页数: 4/4页
文件大小: 96K
代理商: AP9923GEO
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4
AP9923GEO
0.01
0.1
1
10
100
0.01
0.1
1
10
100
-V DS (V)
-I
D
(A)
T A =25
o C
Single Pulse
100us
1ms
10ms
100ms
1s
DC
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
t , Pulse Width (s)
N
o
rm
a
liz
ed
Th
er
ma
lR
e
sp
o
n
se
(
R
thja
)
PDM
Duty Factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=208
oC/W
t
T
0.01
0.05
0.1
0.2
Duty Factor=0.5
Single Pulse
0.02
0
2
4
6
8
0
1020
3040
50
Q G , Total Gate Charge (nC)
-V
GS
,
G
a
te
t
o
S
o
u
rc
e
Vol
tage
(V)
V DS = -6V
I D = -7A
100
1000
10000
1357
9
11
13
-V DS (V)
C
(pF)
f=1.0MHz
C iss
C oss
C rss
Q
VG
QGS
QGD
QG
Charge
-4.5V
0
5
10
15
20
25
30
01
234
-V GS , Gate-to-Source Voltage (V)
-I
D
,
D
rai
n
Cu
rr
e
n
t(A)
T j =150
o C
T j =25
o C
V DS = -5V
Operation in this
area limited by
RDS(ON)
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