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参数资料
| 型号： | AP9926GEO |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 4600 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | ROHS COMPLIANT, TSSOP-8 |
| 文件页数： | 3/4页 |
| 文件大小： | 59K |
| 代理商： | AP9926GEO |
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3/4
AP9926GEO
20
25
30
35
40
23
45
V GS , Gate-to-Source Voltage (V)
R
DS(ON)
(m
Ω
)
I D = 4A
T A =25
o C
0
5
10
15
20
25
0.0
0.5
1.0
1.5
2.0
2.5
V DS , Drain-to-Source Voltage (V)
I
D
,
Dra
in
Current
(
A
)
T C =25
o C
V G =2.0V
4.5V
4.0V
3.5V
3.0V
2.5V
0
6
12
18
24
0.0
0.5
1.0
1.5
2.0
2.5
V DS , Drain-to-Source Voltage (V)
I
D
,
Dra
in
Current
(
A
)
T C =150
o C
V G =2.0V
4.5V
4.0V
3.5V
3.0V
2.5V
0.6
0.8
1.0
1.2
1.4
1.6
-50
0
50
100
150
T j , Junction Temperature (
o C)
No
rm
a
lized
R
DS(ON)
I D = 4A
V G =4.5V
0.01
0.1
1
10
100
0
0.4
0.8
1.2
1.6
V SD , Source-to-Drain Voltage (V)
I
S
(A
)
T j =25
o C
T j =150
o C
0.2
0.6
1.0
1.4
-50
0
50
100
150
T j , Junction Temperature (
o C)
V
GS(t
h)
(V
)
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PDF描述 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AP9926GEO-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Capable of 2.5V Gate Drive, Surface Mount Package |
| AP9926GM | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Low Gate Charge,Surface mount package |
| AP9926GM-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Capable of 2.5V Gate Drive, Surface Mount Package |
| AP9926GO | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9926M | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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