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参数资料
| 型号： | AP9926GEO |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 4600 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | ROHS COMPLIANT, TSSOP-8 |
| 文件页数： | 4/4页 |
| 文件大小： | 59K |
| 代理商： | AP9926GEO |
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4/4
AP9926GEO
0.01
0.1
1
10
100
0.1
1
10
100
V DS , Drain-to-Source Voltage (V)
I
D
(A
)
T A =25
o C
Single Pulse
100us
1ms
10ms
100ms
1s
DC
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
t , Pulse Width (s)
No
rm
a
lized
T
h
erm
a
lResp
o
n
se
(
R
th
ja
)
PDM
Duty Factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=208
oC/W
t
T
0.02
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0.01
0
2
4
6
8
10
12
0
5
10
15
20
25
Q G , Total Gate Charge (nC)
V
GS
,
Ga
te
to
S
o
u
rce
V
o
lta
g
e(V
)
V DS =10V
V DS =15V
V DS =20V
I D =4.6A
10
100
1000
1
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
C iss
C oss
C rss
td(on) tr
td(off) tf
VDS
VGS
10%
90%
Q
VG
5V
QGS
QGD
QG
Charge
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AP9926GEO-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Capable of 2.5V Gate Drive, Surface Mount Package |
| AP9926GM | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Low Gate Charge,Surface mount package |
| AP9926GM-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Capable of 2.5V Gate Drive, Surface Mount Package |
| AP9926GO | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9926M | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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