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参数资料
| 型号： | AP9932GM |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 30 V, 0.04 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, SOP-8 |
| 文件页数： | 3/7页 |
| 文件大小： | 96K |
| 代理商： | AP9932GM |
AP9932GM
P-CH Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
-30
-
V
ΔBV
DSS/ΔTj
Breakdown Voltage Temperature Coefficient
Reference to 25℃,ID=-1mA
-
-0.02
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=-10V, ID=-4A
-
70
mΩ
VGS=-4.5V, ID=-3A
-
90
mΩ
VGS=-2.5V, ID=-2A
-
120
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-0.5
-
V
gfs
Forward Transconductance
VDS=-5V, ID=-3A
-
8
-
S
IDSS
Drain-Source Leakage Current (Tj=25
oC)
VDS=-30V, VGS=0V
-
-1
uA
Drain-Source Leakage Current (Tj=70
oC)
VDS=-24V, VGS=0V
-
-25
uA
IGSS
Gate-Source Leakage
VGS=±12V
-
nA
Qg
Total Gate Charge
2
ID=-3A
-
10
16
nC
Qgs
Gate-Source Charge
VDS=-24V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
3
-
nC
td(on)
Turn-on Delay Time
2
VDS=-15V
-
8
-
ns
tr
Rise Time
ID=-1A
-
9
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-5V
-
25
-
ns
tf
Fall Time
RD=15Ω
-14
-
ns
Ciss
Input Capacitance
VGS=0V
-
690
1100
pF
Coss
Output Capacitance
VDS=-25V
-
170
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
75
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
VSD
Forward On Voltage
2
IS=-1.2A, VGS=0V
-
-1.2
V
trr
Reverse Recovery Time
IS=-3A, VGS=0V
-
25
-
ns
Qrr
Reverse Recovery Charge
dI/dt=-100A/s
-
20
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
2 copper pad of FR4 board , t <10sec ; 186 ℃/W when mounted on Min. copper pad.
±100
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相关代理商/技术参数 |
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| AP9934GM | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:2N AND 2P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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