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参数资料
| 型号： | AP9960GD |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 7 A, 40 V, 0.025 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, PLASTIC, DIP-8 |
| 文件页数： | 2/4页 |
| 文件大小： | 72K |
| 代理商： | AP9960GD |
Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
40
-
V
ΔBV
DSS/ΔTj
Breakdown Voltage Temperature Coefficient
Reference to 25℃, ID=1mA
-
0.032
-V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V, ID=7A
-
25
mΩ
VGS=4.5V, ID=5A
-
40
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=7A
-
25
-
S
IDSS
Drain-Source Leakage Current (Tj=25
oC)
VDS=40V, VGS=0V
-
1
uA
Drain-Source Leakage Current (Tj=70
oC)
VDS=32V ,VGS=0V
-
25
uA
IGSS
Gate-Source Leakage
VGS= ± 20V
-
±100
nA
Qg
Total Gate Charge
2
ID=7A
-
14.7
-
nC
Qgs
Gate-Source Charge
VDS=20V
-
7.1
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
6.8
-
nC
td(on)
Turn-on Delay Time
2
VDS=20V
-
11.5
-
ns
tr
Rise Time
ID=1A
-
6.3
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
28.2
-
ns
tf
Fall Time
RD=20Ω
-
12.6
-
ns
Ciss
Input Capacitance
VGS=0V
-
1725
-
pF
Coss
Output Capacitance
VDS=25V
-
235
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
145
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
IS
Continuous Source Current ( Body Diode )
VD=VG=0V , VS=1.3V
-
1.54
A
VSD
Forward On Voltage
2
IS=2.3A, VGS=0V
-
1.3
V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Mounted on 1 in
2 copper pad of FR4 board ; 90℃/W when mounted on Min. copper pad.
AP9960GD
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