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参数资料
| 型号： | AP9960GD |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 7 A, 40 V, 0.025 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, PLASTIC, DIP-8 |
| 文件页数： | 3/4页 |
| 文件大小： | 72K |
| 代理商： | AP9960GD |
AP9960GD
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
0
8
16
24
32
01234
V DS , Drain-to-Source Voltage (V)
I
D
,
Drain
Current
(A)
T A =150
o C
10V
6.0V
5.0V
4.5V
V GS =4.0V
0
12
24
36
01234
V DS , Drain-to-Source Voltage (V)
I
D
,
Drain
Current
(A)
T A =25
o C
10V
6.0V
5.0V
4.5V
V GS =4.0V
0.2
0.8
1.4
2
-50
0
50
100
150
T j , Junction Temperature (
o C)
Norm
alize
d
R
DS(
ON)
I D =7.0A
V GS =10V
0
20
40
60
80
24
68
10
12
V GS , Gate-to-Source Voltage (V)
R
DS(
ON)
(m
ΩΩΩΩ
)
I D =7.0A
T A =25 ℃
℃
0.01
0.1
1
10
0
0.4
0.8
1.2
V SD , Source-to-Drain Voltage (V)
I
S(A)
Tj=25
o C
Tj=150
o C
0.5
1
1.5
2
2.5
3
3.5
-50
0
50
100
150
T j , Junction Temperature (
o C )
V
GS(
th)
(V)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AP9960GH | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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| AP9960M | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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