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参数资料
| 型号： | AP9965GEM |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 40 V, 0.028 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, SOP-8 |
| 文件页数： | 3/4页 |
| 文件大小： | 126K |
| 代理商： | AP9965GEM |
AP9965GEM
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. On-Resistance vs.
Reverse Diode
Drain Current
3/4
0
10
20
30
01234
V DS , Drain-to-Source Voltage (V)
I D
,Dr
ai
n
C
u
rr
ent
(A
)
T A =25
o C
10V
7.0 V
5.0 V
4.5 V
V G = 3.0 V
0
10
20
30
0123
456
V DS , Drain-to-Source Voltage (V)
I D
,Dr
ai
n
C
u
rr
ent
(A
)
T A = 150
o C
10V
7.0 V
5.0 V
4.5 V
V G = 3.0 V
20
45
70
24
68
10
V GS , Gate-to-Source Voltage (V)
R
DS(ON)
(m
Ω
)
I D =4 A
T A =25 ℃
0.7
1.0
1.3
1.6
25
50
75
100
125
150
T j , Junction Temperature (
o C)
N
ormalize
dR
DS(ON)
I D =6 A
V G =10V
0
2
4
6
8
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
I S
(A
)
T j =25
o C
T j =150
o C
10.0
20.0
30.0
40.0
50.0
0
1020
3040
I D , Drain Current (A)
R
DS(ON)
(m
)
V GS =4.5V
V GS =10V
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