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参数资料
| 型号： | AP9965GEM |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 40 V, 0.028 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, SOP-8 |
| 文件页数： | 4/4页 |
| 文件大小： | 126K |
| 代理商： | AP9965GEM |
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4/4
AP9965GEM
Q
VG
4.5V
QGS
QGD
QG
Charge
0
4
8
12
16
0
5
10
15
20
Q G , Total Gate Charge (nC)
V
GS
,G
ate
to
S
ou
rc
eVoltage
(
V
)
V DS =20 V
V DS =25 V
V DS =30 V
I D =6 A
10
100
1000
10000
1
5
9
1317
2125
29
V DS , Drain-to-Source Voltage (V)
C
(
pF)
f=1.0MHz
C iss
C oss
C rss
0.01
0.1
1
10
100
0.1
1
10
100
V DS , Drain-to-Source Voltage (V)
I D
(A
)
T A =25
o C
Single Pulse
100us
1ms
10ms
100ms
1s
DC
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
N
ormalize
dT
h
er
mal
Re
spon
se
(
R
th
ja
)
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 135℃/W
t
T
0.02
0
10
20
30
02
46
V GS , Gate-to-Source Voltage (V)
I D
,Dr
ai
n
C
u
rr
ent
(A
)
T j =150
o C
T j =25
o C
V DS =5V
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