参数资料
型号: AP9971GI
厂商: ADVANCED POWER ELECTRONICS CORP
元件分类: JFETs
英文描述: 23 A, 60 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封装: ROHS COMPLIANT, TO-220CFM, 3 PIN
文件页数: 1/5页
文件大小: 121K
代理商: AP9971GI
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Fast Switching Performance
BVDSS
60V
▼ Single Drive Requirement
RDS(ON)
36mΩ
▼ Full Isolation Package
ID
23A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TC=100℃
A
IDM
A
PD@TC=25℃
W
W/℃
TSTG
TJ
Symbol
Value
Units
Rthj-c
Thermal Resistance Junction-case
Max.
4.0
℃/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
65
℃/W
Data and specifications subject to change without notice
RoHS-compliant Product
200712071-1/4
AP9971GI
Parameter
Rating
Drain-Source Voltage
60
Gate-Source Voltage
±20
Continuous Drain Current, VGS @ 10V
23
Continuous Drain Current, VGS @ 10V
14
Pulsed Drain Current
1
80
Total Power Dissipation
31.3
-55 to 150
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
0.25
Thermal Data
Parameter
Storage Temperature Range
G
D
S
The Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-220CFM isolation package is universally preferred for all
commercial-industrial through hole applications.
G
D
S
TO-220CFM(I)
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