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参数资料
| 型号： | AP9972GP |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 60 A, 60 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | ROHS COMPLIANT, TO-220, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 98K |
| 代理商： | AP9972GP |
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Low Gate Charge
BVDSS
60V
▼ Single Drive Requirement
RDS(ON)
18mΩ
▼ RoHS Compliant
ID
60A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TC=100℃
A
IDM
A
PD@TC=25℃
W
W/℃
EAS
Single Pulse Avalanche Energy
3
mJ
IAR
A
TSTG
℃
TJ
℃
Symbol
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
1.4
℃
/W
Rthj-a
40
℃
/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
62
℃
/W
Data and specifications subject to change without notice
200906196
Thermal Data
Parameter
230
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
0.7
Avalanche Current
3
Storage Temperature Range
Total Power Dissipation
89
-55 to 150
Gate-Source Voltage
+25
Continuous Drain Current, VGS @ 10V
60
Continuous Drain Current, VGS @ 10V
38
Pulsed Drain Current
1
Parameter
Rating
Drain-Source Voltage
60
RoHS-compliant Product
1
AP9972GS/P
30
45
Maximum Thermal Resistance, Junction-ambient (PCB mount)
4
G
D
S
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-263 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP9972GP) are
available for low-profile applications.
G D
S
TO-263(S)
G
D
S
TO-220(P)
相关PDF资料 |
PDF描述 |
|---|---|
| AP9972GS | 60 A, 60 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AP9973GD | 3.9 A, 60 V, 0.08 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| AP9973GM | 3.9 A, 60 V, 0.08 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| AP9973GS | 14 A, 60 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AP9973GP | 14 A, 60 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AP9972GR | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9972GR_09 | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9972GS | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9973GD | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9973GH-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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